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This paper investigates the prospects of mixed bundle of carbon nanotubes (CNT) as low-power high-speed interconnects for future VLSI applications. The power dissipation and delay of CNT bundle interconnects are examined and compared with that of the Cu interconnects at the 32-nm technology node. We evaluated and compared various performance metrics of interconnects with both CMOS and carbon nanotube...
The carbon nanotube (CNT) bundles have potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects in very deep submicron (VDSM) technology. This paper presents a comprehensive analysis of mixed bundles of CNTs and compares various transmission line model interconnect parameters (R, L, & C) with that of the Cu interconnects...
Bundles of carbon nanotubes (CNT) have potential to replace on-chip copper (Cu) interconnects due to their large conductivity and current carrying capabilities. Analysis of the impact of process variations on CNT bundles relative to standard copper interconnects is important for predicting the reliability of CNT based interconnects. This paper investigates the impact of process variations on the resistance...
The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area...
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the switching mechanisms, switching uniformity, scalability and reproducibility have not yet been solved. In this paper, we discuss the recent progress of switching mechanisms and switching behaviors of various materials.
We have investigated various doped metal oxides such as copper doped molybdenum oxide, copper doped Al2O3, copper doped ZrO2, aluminium doped ZnO, and CuxO for novel resistance memory applications. Compared with non-stoichiometric oxides (Nb2O5-x, ZrOx, SrTiOx), doped metal oxides show higher device yield. Moreover, Cu:MoOx have demonstrated excellent memory characteristics such as reliability under...
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