The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Variation analysis of n-MOSFETs fabricated by different manufacturers at three technology nodes (180, 100, and 65 nm) demonstrates that surface-potential compact models are capable to bridge the gap between circuit simulation and TCAD by enabling extraction of microscopic MOSFET-parameter variation from measured macroscopic Vth and Ion variations. Considering only the four microscopic variations of...
An analysis of the measured macroscopic withinwafer variations for threshold voltage (Vth) and on-current (Ion) over several technology generations (180 nm, 100 nm and 65 nm) is reported. It is verified that the dominant microscopic variations of the MOSFET device can be extracted quantitatively from these macroscopic variation data by applying the surface-potential compact model Hiroshima University...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.