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We report on L$_{\rm g} = 80$ -nm trigate quantum-well InGaAs metal-oxide–semiconductor field-effect transistors (MOSFETs) with record combination of subthreshold swing, transconductance and ON-current performance. The device features a multilayer cap design, bilayer Al2O3/HfO2 (0.7/2 nm) gate-stack by atomic layer deposition and dry etched In0.53Ga0.47As fin. An Lg = 80-nm trigate MOSFET with fin-width...
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