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Rutherford backscattering (RBS) has been used to determine diffusion coefficients of indium atoms in semi-insulating (100) GaAs implanted with 250keV In + ions at a fluence of 3×10 16 cm −2 and isobarically annealed at 600 and 800°C temperature. Computer modeling of the indium depth profiles based on Ga vacancy-mediated diffusion has shown good agreement with the RBS experimental...
Optical properties of ion-implanted a-Si 1-x C x :H for x=0.08 and 0.15 carbon contents have been studied. We investigated the influence of medium (2.5-5x10 15 cm -2 , 50 and 150keV Fe + ions) as well as high fluences (10 16 -10 17 cm -2 , 45keV Cu + ions) implanted into 100 and 200nm layers...
The study of GaAs implanted with 3x10 16 cm -2 In + ions and annealed in the isobaric process at temperatures 600 o C and 950 o C is presented in this paper. RBS, channeling and SIMS methods were used in our experiment. The depth profiles of all species were determined. Two main processes were observed for the implanted and annealed samples. The first...
GaAs samples implanted with Ar + , Al + and Xe + ions were studied by using the RBS and ellipsometric methods. The values of thickness of the implanted layers were estimated by both methods and they were in good agreement. These results were also compared with the values of parameters of the depth distribution of implanted ions calculated by SATVAL code. Multilayer models were...
Using high-contrast Brillouin spectroscopy we have investigated surface acoustic waves in supported layers formed on GaAs substrates by 250keV In + implantation and subsequent rapid thermal annealing. The angular dispersion of surface acoustic wave velocity in the implanted and annealed layers shows elastic anisotropy characteristic for the (001) planes of the substrate. The values of both...
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