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In this study, we have simulated the CH + ions bombardment on a Si-terminated 3C–SiC (001) surface using molecular dynamic simulations with a Tersoff–Brenner potentials. The results show that the sputtering yields of Si atoms is more than that of C atoms. With increasing incident energy the uptake of H atoms increases, while the uptake of C atoms decreases. In amorphous layer, a carbon-rich...
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