Search results for: Joachim Knoch

Items from 1 to 18 out of 18 results

article

Miniaturized pH‐Sensitive Field‐Effect Capacitors with Ultrathin Ta₂O₅ Films Prepared by Atomic Layer Deposition

Denise Molinnus, Heiko Iken, Anna Lynn Johnen, Benjamin Richstein, more

physica status solidi (a) > 219 > 8 > n/a - n/a

Miniaturized electrolyte–insulator–semiconductor capacitors (EISCAPs) with ultrathin gate insulators have been studied in terms of their pH‐sensitive sensor characteristics: three different EISCAP systems consisting of Al–p‐Si–Ta₂O₅(5 nm), Al–p‐Si–Si₃N₄(1 or 2 nm)–Ta₂O₅ (5 nm), and Al–p‐Si–SiO₂(3.6 nm)–Ta₂O₅(5 nm) layer structures are characterized in buffer solution with different pH values by means...

article

Alternatives for Doping in Nanoscale Field‐Effect Transistors

Felix Riederer, Thomas Grap, Sergej Fischer, Marcel R. Mueller, more

physica status solidi (a) > 215 > 7 > n/a - n/a

In the present article, alternatives to impurity doping in nanoscale field‐effect transistors (FETs) are investigated. The discussion is based on conventional and tunnel FETs. The impact of dopant deactivation due to dielectric mismatch or quantization, random dopant effects, and the degeneracy level on the performance is discussed. As alternatives metal‐semiconductor‐contacts, gate‐controlled doping...

chapter

A novel approach for scalable sensor arrays using cantilever field-effect transistors

Andreas Hessel, Stefan Scholz, Alexander Pelger, Albert Pfander, more

2017 47th European Solid-State Device Research Conference (ESSDERC) > 272 - 275

ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)

Based on a novel approach of reading-out cantilever sensors with an exponential response of the measurement signal on adsorption of e.g. molecules, we study cantilever array sensors that enable the detection and discrimination of various different adsorbates. Different cantilever geometries and different ratios of functionalized and unfunctionalized areas on the cantilevers are used together with...

article

Dopant‐free complementary metal oxide silicon field effect transistors

Sergej Fischer, Hauke Ingolf Kremer, Birger Berghoff, Tobias Maß, more

physica status solidi (a) > 213 > 6 > 1494 - 1499

Abstractauthoren We present a dopant‐free CMOS technology where n‐ and p‐type semiconductor contacts are realized exclusively based on ultrathin silicon nitrides and metals with appropriate work function. Ellipsometry and FTIR measurements are applied to characterize the thermally grown nitride layers. Unipolar behavior and ohmic contact behavior are accomplished showing that with an appropriate nitride...

chapter

Semiconductor Nanostructures and Devices

Joachim Knoch, Hans Lüth

NATO Science for Peace and Security Series B: Physics and Biophysics > Nanoscaled Semiconductor-on-Insulator Structures and Devices > Physics of Novel Nanoscaled SemOI Devices > 143-158

In this paper we present semiconductor nanostructures and devices for future nanoelectronics applications. New device architectures for advanced CMOS as well as novel concepts for a beyond CMOS scenario are presented and discussed. We study SOI Schottky-barrier MOSFETs and show methods for improving the device performance using dopant segregation during silicidation as well as ultrathin body SOI and...

article

Influence of cracks on the local current–voltage parameters of silicon solar cells

Tobias M. Pletzer, Justus I. Mölken, Sven Rißland, Otwin Breitenstein, more

Progress in Photovoltaics: Research and Applications > 23 > 4 > 428 - 436

The existence of cracks in silicon solar cells can drastically reduce the electrical performance of an individual cell and even of an entire photovoltaic module. An in‐depth understanding of the influence of cracks on solar cells enables therefore calculations of the crack impact and other following effects on module level. This paper shows a detailed analysis of the electrical influence of cracks...

chapter

Quantitative local current-voltage analysis with different spatially-resolved camera based techniques of silicon solar cells with cracks

Tobias M. Pletzer, Justus I. van Molken, Sven Rissland, Brett Hallam, more

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) > 3473 - 3478

2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The ongoing trend to decrease the wafer thickness in the fabrication of silicon solar cells increases the number of possible cracks. Therefore, an in-depth understanding of the influence of cracks on solar cells is necessary. In this work, we investigate silicon solar cells with cracks by employing three camera-based spatially-resolved techniques and use the data to quantitatively calculate local-current...

article

Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation

Markus Lenz, Horst Windgassen, Tobias M. Pletzer, Joachim Knoch

IEEE Journal of Photovoltaics > 2014 > 4 > 4 > 1025 - 1031

Emitter performance is crucial for the efficiency of solar cells. A further increase of efficiency requires reducing recombination losses while keeping parasitic resistances and shadowing at a minimum. In silicon solar cells, recombination can be lowered by decreasing the emitter doping concentration; however, this comes at the cost of increasing contact and sheet resistances. Dopant segregation during...

chapter

Gate-controlled doping in carbon-based FETs

Joachim Knoch, Thomas Grap, Marcel Muller

2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC) > 162 - 167

2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC)

We present experimental studies and simulations on gate-controlled doping in carbon-based field-effect transistors. While the low density of states in carbon-based semiconductors allows e.g. the investigation of the coupling between a metal and graphene, it is detrimental to the functionality of novel device concepts such as band-to-band tunneling FETs. Creating appropriate doping profiles in the...

article

Properties of Metal–Graphene Contacts

Joachim Knoch, Zhihong Chen, Joerg Appenzeller

IEEE Transactions on Nanotechnology > 2012 > 11 > 3 > 513 - 519

We present a study on the metal–graphene contact properties. Utilizing a dual-gate field-effect transistor device, an energetic separation between the Fermi level and the Dirac point in the contact areas can be adjusted deliberately by applying an appropriate front-gate voltage that acts only on the channel. This front-gate voltage is compensated by an opposite large-area back-gate voltage, thereby...

article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Christoph Urban, Mostafa Emam, Christian Sandow, Joachim Knoch, more

IEEE Electron Device Letters > 2010 > 31 > 6 > 537 - 539

We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i.e., different...

article

Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine

Heinz Schmid, Mikael T. Björk, Joachim Knoch, Siegfried Karg, more

Nano Letters > 2009 > 9 > 1 > 173 - 177

article

Toward Nanowire Electronics

Joerg Appenzeller, Joachim Knoch, Mikael T. Bjork, Heike Riel, more

IEEE Transactions on Electron Devices > 2008 > 55 > 11 > 2827 - 2845

<para> This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely,...

chapter

THz probe for nanowire FETs: simulation of few-electron fingerprints

Klaus Michael Indlekofer, Radoslav Nemeth, Joachim Knoch

2007 65th Annual Device Research Conference > 179 - 180

65th Device Research Conference

article

1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry

Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, more

IEEE Transactions on Nanotechnology > 2007 > 6 > 3 > 368 - 373

<para> We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude $A$ and the sample resistance $R$ . By contacting semiconducting tubes with different metal electrodes we are able to show that a small $A$ / $R$ value by itself is no indication of a suitable metal/tube...

chapter

Seamless transition from the single-electron regime to field-effect transistor operation of nanoscale Schottky-barrier FETs

Klaus Indlekofer, Joachim Knoch, Joerg Appenzeller

2006 64th Device Research Conference > 253 - 254

2006 64th Device Research Conference

article

Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch, Zhihong Chen, more

Nano Letters > 2006 > 6 > 5 > 930 - 936

article

The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

Zhihong Chen, Joerg Appenzeller, Joachim Knoch, Yu-ming Lin, more

Nano Letters > 2005 > 5 > 7 > 1497 - 1502

Filter options

Publication date

Last year (1)
Last 3 years (1)

Close

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

From:

To:
Set your own date range

Data set

ieee (10)
Wiley (4)
ACS (3)
Springer (1)

Journal

Nano Letters (3)
physica status solidi (a) (3)
IEEE Transactions on Nanotechnology (2)
IEEE Electron Device Letters (1)
IEEE Journal of Photovoltaics (1)
IEEE Transactions on Electron Devices (1)
Progress in Photovoltaics: Research and Applications (1)

INFONA - science communication portal

Search results for: Joachim Knoch

Add recipient

Sending message cancelled

Are you sure you want to cancel sending this message?

Send message

Filter options

Publication date

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

Content availability

Publication type

Keywords

Data set

Journal

Reporting an error / abuse

Sending the report failed

Accessibility options