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In this paper, the recent progress and applications of ion beam defect engineering (IBDE) are reported. IBDE in silicon shows that it can be used for (1) the reduction of secondary defects created by the dopant-ion implantation, (2) the gettering of F atoms from the B doped regions in BF 2 implanted silicon; (3) the reduction of B diffusion in BF 2 implanted silicon. IBDE applications...
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