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Source-drain process optimization and a diffusion layout technique enable reduction of the snapback voltage (Vt1). Lowering Vt1 of the fully silicided ggMOS enabled low on-resistance and a higher failure current (It2) combined stably in multi-finger turn-on operation. Moreover, to meet both hot-carrier reliability and the ESD requirement, lightly doped drain (LDD) process was obtained.
This paper proposes a practical methodology for extracting overall variations of metal oxide semiconductor field-effect transistor (MOSFET) characteristics on the 65 nm node and beyond. Firstly, we discuss the origins of MOSFET variations and how they are categorized by the causes and unit regions. Secondly, we demonstrate how these variations are quantitatively separated into random and systematic...
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