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Laser scanning confocal fluorescent microscopy and the friction mode of Atomic Force Microscopy were adopted as metrologies of abrasive behaviors and removal force during polishing and cleaning processes As small as a diameter of 50nm silica particle can be individually detected and spatial distribution of particles in three dimensional space also clearly observed using the fluorescent microscopy...
In this study, nanoscale corrosion behavior of copper fine wires in dilute NaCl solution is studied by atomic force microscopy and electron backscatter diffraction. The dissolution rate of grains constituting the wires strongly depends on their crystallographic orientation. In pure water, the dissolution rate increases in the order of (111)<(001)<(110). Addition of Cl− dramatically increases...
Polyvinyl acetal (PVA) brushes have been widely used in the Post CMP cleaning applications. To better understanding the mechanical characteristics of the PVA brushes, we measured the normal force during the compression and its relation to the water behavior contained inside the brushes. The normal force is directly related to the shear force which is important to the cleaning performance. In this...
Inkjet technology was applied to develop a standard contaminated wafer for quantitatively and qualitatively evaluating the cleaning efficiency of a post-CMP cleaning process. Aiming at the ultimate goal of forming regular and repetitive dot patterns, each of which consists of one contaminant particle, we controlled the size of micro droplets containing silica particles and ejected from the inkjet...
In order to gain some insights for post CMP cleaning, we measured the forces during brush scrubbing. In this experiment, both the normal force Fn and shear (friction) force Fs generated by a single sponge sliding on the plate were measured. The Fn of PVA increased quickly and attained its maximum value. After that, Fn gradually decreased to a constant value even in the same compression distance. Fs...
To reveal the mechanism of watermark formation on a Cu film, the Volta potential in a droplet area on Cu was evaluated using the scanning Kelvin-probe method. The droplet area on Cu exhibited an upward convex potential profile, indicating that the electrochemical reactions were more active in the areas around the droplet than at the center of the droplet. On the other hand, Si exhibited a profile...
Effects of air flow on droplet removal from wafer were investigated as the fundamental study of CMP cleaning. Deformation and movement of droplet on wafer by air flow were visualized by a high speed camera, and characteristics of droplet behavior were evaluated. Effects of wafer film types (Two types of wafer, Type-A and Type-B were used in this study) on droplet behavior were also investigated. Droplet...
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