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In this paper, we analyze on- and off-current characteristic of the 22-nm Bi-level FinFET in which two different fin widths are formed. From the 3D Technology CAD (TCAD) simulations, we find out that the narrower the fin width the lower the leakage current. However, narrower fin width results in the reduced driving current for the triple-gate FinFET structure. We propose the optimal shape parameters...
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