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Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical...
High-quality Tl3PbCl5 single crystal has been grown employing the Bridgman-Stockbarger technique in a two-zone furnace. For the Tl3PbCl5 single crystal, X-ray photoelectron spectra for mechanically cleaned surface have been measured. To elucidate the electronic structure of Tl3PbCl5, the Korringa-Kohn-Rostoker method within coherent potential approximation (KKR-CPA) has been used to calculate total...
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