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Flash Memory
In article number 1800194 by Jun‐Young Park, Yang‐Kyu Choi and co‐workers, a thermal erasing method for destroying the data stored in flash memory is proposed at cell level and at commercial chip level. The principle of the proposed method is based the loss of electrons stored in the charge trap layer in flash memory at high temperature. The proposed method destroys the data permanently...
This study, a thermal method for erasing and permanently destroying data stored in flash memory fabricated on a suspended silicon nanowire is demonstrated. An intentionally applied heat treatment is used to erase the data stored in the charge trap layer of the flash memory. The data destruction is verified and analyzed at a unit cell level as well as in a commercial off‐the‐shelf chip. Characteristics...
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