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In this letter, a novel Flash memory cell structure using dual doping polysilicon (p-n-p) as the floating gate, which can improve the cell performance and reliability, is proposed. Except for an additional large-angle tilted implantation, the fabrication technology is essentially compatible with standard CMOS technology. Measured results show that the new Flash cell with p-n-p-type floating gate can...
Scaling down of conventional flash memory technology faces difficult technical challenges and some physical limitations. Novel silicon-based flash cell structures were presented in this paper as possible solutions. A novel cell structure using dual doping polysilicon (PNP) as the floating gate is proposed and experimentally exhibit higher programming speed and better data retention characteristics...
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