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The understanding of the switching mechanisms in resistive random access memory is of interest as one can use the fundamental mechanisms to better design the memory structure for enhancing both switching and reliability performance. Various analytical methods have been explored to better understand the wear-out and eventual failure mechanisms of RRAM stacks. This includes atomic-scale characterization...
Nanometer scale variations in property of polycrystalline high-к (HK) dielectrics significantly affect the reliability and performance of HK-based metal-oxide-semiconductor (MOS) devices. Electrical and physical insight into the kinetics and variability in degradation and breakdown trends of dielectrics is essential to understand the physics and stochastics of failure in transistors. This study will...
The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy. The analysis of the degradation...
We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble...
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