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The performances of InGaN Schottky photodetectors with varied fabrication processes were investigated. The photoresponse and dark current of InGaN Schottky photodetectors can be obviously improved by inserting a thin Si3N4 passivation layer between the InGaN layer and the Schottky metal. Furthermore, a mesa process gives not only a further increase in the photoresponse but also a pronounced reduction...
Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.
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