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Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer on diamond by doping AlN with boron. In this study, highly c-axis-oriented wurtzite boron–aluminum nitride (B, Al)N films were deposited on diamond by...
In this research, we demonstrated the viability of oriented AlN layer that incorporated BN to enhance the texturing. Wurtzite (Al, B)N films were deposited on a diamond wafer (diamond film on Si wafer) by a co-sputtering technique. The preferred orientation structure is sensitive to sputtering control factors. The relationship between the microstructures and process conditions were examined with XRD,...
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