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Abstract: From an organic bulk heterojunction photodetector fabricated from a blend of P3HT/PCBM-C60, we report an external quantum efficiency of 87 plusmn 2 % under an applied bias voltage of -10V, leading to an internal quantum efficiency of 97 %.
A comprehensive examination of the low-frequency noise characteristics of AlSb/InAs and related high-electron mobility transistors (HEMTs) in the 6.1-Aring-lattice-constant material system is reported. The effect of gate bias on the noise of devices in this technology is reported for the first time. The slope of the noise level in all the devices examined is nearly 1/f below 100 Hz, but some have...
Summary form only given. Recent studies have been carried out on the resonant response from single interface fluctuation quantum dots. Such a discrete-level model yields unique signatures under strong resonant driving, including Rabi oscillations. To date, Rabi oscillations (excluding microcavity studies) have only been reported for two-dimensional excitonic systems. We present data showing the nonlinear...
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