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Linear photovoltaic IR-sensor arrays for the 8-12 ??m wavelength range have been fabricated for the first time in narrow gap Pb1-xSnxSe layers grown heteroepitaxially on Si(111) substrates. Heteroepitaxy was achieved using stacked intermediate CaF2-BaF2 buffer layers. Both, the 2000 ?? thick fluoride buffer layer and the Pb1-xSnxSe were grown by molecular beam epitaxy (MBE). Differential resistance...
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