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A fundamental oscillation of up to 831 GHz was observed at room temperature in GaInAs/AlAs resonant tunneling diodes integrated with planar slot antennas. The thickness of the collector spacer layer was optimized (20 nm) and the mesa area (<1 mum2) was reduced in order to reduce the resonant tunneling diode capacitance. Reduction in the negative differential conductance in the small mesa area was...
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