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We demonstrate Si/SiGe impact-ionization-avalanche-transit-time photodiodes at 830 nm wavelength. It achieves an ultra-high gain-bandwidth product (690 GHz, 30 GHz bandwidth) with high external efficiency (53.2%) and 10 Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.
By integrating near-ballistic uni-traveling-carrier photodiodes with planar W-band bandpass filters, the demonstrated devices under optical local-oscillator and intermediate-frequency signals injection can exhibit high internal up-conversion-gain (14.2 dB) with a high output photocurrent (19 mA) at W-band (100 GHz).
We demonstrate a high-performance heterojunction phototransistor (HPT): separate absorption-charge multiplication HPT. The incorporation of an In0.52Al0.48 As-based multiplication layer in the In0.53 Ga0.47As-based collector layer of our HPT allows for a great shortening of the trapping time ( ~ ns to ~ 30 ps) of electrons at the base-emitter junction under near avalanche operation, without sacrificing...
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