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Three grain size regimes were identified: Regime I (d>∼0.5μm), Regime II (d≈10–500nm) and Regime III (d<∼10nm). Grain size hardening in accord with the Hall–Petch (H–P) equation occurred in Regimes I and II, grain size softening with the flow stress proportional to d −1 occurred in III. The rate-controlling mechanism in Regime I was concluded to be the intersection of dislocations, that...
The strain rate sensitivity of the flow stress of ultrafine-grained Cu processed by ECAE is compared with that of vapor-deposited and electrodeposited Cu. The results for all three processing methods were in accord with the model of grain boundary shear promoted by the pile-up of dislocations.
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