The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Abstract. In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambient at 850C for times ranging from 2 to 10h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with...
Thin Si1-yCy epilayers were grown by MBE on (100) Si single-crystal substrates either directly on adislocation-free or on ahighly dislocated Si buffer layer. The orientation of the epilayers and their strain status were measured by double-crystal X-ray diffraction. Cross sections were prepared for TEM investigations. Epitaxial layers of about 130nm thickness and carbon contents up to [%at.]1.38 grown...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.