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Designing of gate drivers for high voltage SiC power devices in medium voltage applications is challenging due to high dv/dt and di/dt at the switching instants. During short circuit fault, the device current rises with high di/dt, and eventually the device fails within few of micro seconds if not protected. Short circuit protection of power devices is an essential feature to improve reliability of...
The body diodes of 10kV SiC MOSFETs can be used as anti-parallel diodes in medium voltage converters instead of widely used SiC JBS and PiN diodes. Characterization of switching loss of the body diodes is required to evaluate its candidature for replacement of JBS/PiN diodes. Normally, double pulse test setup is used to observe the reverse recovery behavior of the diodes. But, in high voltage diodes,...
This work shows a modified excess current preservation circuitry for digital power amplifier. Excess current is a condition when a greater than required current occurs, which will be dangerous for our instrument. This preservation circuitry is useful to cut off the output buffer when two output pins short-circuit to Vcc, short-circuit to Gnd or short-circuit to one another. Circuit has maximum output...
Hall-effect current sensors are widely used in industrial applications. Characterization of their steady state, dynamic capabilities and thermal endurance verification is important to ensure the sensor performance. It is shown that an H-bridge inverter topology with an RCD snubber, packaged as proposed, can be used for large signal sinusoidal current characterization and step current characterization...
This work reports the DC characteristics of dual gated large area graphene metal oxide semiconductor field effect transistor (MOSFET). The sheet charge density dependent quantum capacitance is obtained self-consistently with considering the impurities concentration of the gate oxide layer. The potential profile as well as sheet charge density of graphene channel is calculated. The C-V and I-V characteristics...
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