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Nanoscale‐crossbar electrochemical‐metallization (ECM) type resistive‐switching random access memory (ReRAM) is considered promising candidates for next‐generation non‐volatile memory. However, performing nanoscale patterning with traditional Cu‐based ECM ReRAM is quite challenging, because Cu is difficult to control and pattern using lithography and etching. In this study, a nanoscale Cu‐based ReRAM...
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