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For more than the last 50 years, tremendous researchers have managed to drive revolutionary technology by shrinking silicon transistors, the key building blocks for all computing technology. However, as transistors are approaching fundamental roadblocks which cannot still be in a fashion to be smaller from silicon, researchers are therefore looking for materials to replace silicon. In this sense,...
We investigates the temperature effect on current-voltage and low frequency noise of multilayer WSe2 FETs. The field effect mobility (μFE), Ion/Ioff, subthreshold slope (SS) and hysteresis were deteriorated as the temperature increases. It is because of enhanced phonon scattering and increase of thermally generated carrier density. From the dependence of noise power spectral density of drain current,...
We characterized the behavior of transient bit-line current (IBL) during reading after giving a pre-bias (Vpre) to two different cells in 3-D stacked NAND flash memory having poly-Si body. Depending on the dominance of charge trapping in blocking dielectric or the interface between the tunneling oxide and the poly-Si body, opposite behavior was observed. To identify the cause, we systematically analyzed...
The nanocomposites based on poly (styrene-b-ethylene butylene-b-styrene) (SEBS) and multiwalled carbon nanotubes (MWNTs) were prepared and electrical, thermal, and mechanical properties of the nanocomposites were investigated. SEBS is a block copolymer showing microphase separated morphologies and can be a matrix polymer for double percolation of MWNTs in nanocomposites. In order to facilitate the...
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