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Semipolar () GaN light‐emitting diodes and () GaN films are demonstrated on sapphire substrates. The processes developed here embody all the required steps in order to produce planar semipolar devices on sapphire substrates with complete control of the crystallographic orientation. Theoretical and experimentally observed aspects of semipolar materials and devices on bulk substrates are...
The complete freedom to choose the surface orientation of GaN has been an elusive goal for growth on sapphire substrates. As opposed to bulk GaN substrates, which can be arbitrarily sliced at any orientations, the growth on planar sapphire substrates is constrained to only several discrete orientations. For high efficiency, low droop light‐emitting diodes, the surface with the best demonstrated LEDs...
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