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2D β‐Ga2O3 nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin...
The authors report on growth and characterization of semipolar () GaN films improved by an in situ SiNx pretreatment of m‐sapphire substrate surface. Formation of SiNx and Ga‐rich surface at the initial growth stages is evidenced by X‐ray photoelectron spectroscopy. With the SiNx pretreatment, the GaN nucleated island density decreases due to the reduction of nucleation density by the SiNx mask...
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