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This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the Class-E topology for 3GPP-FDD applications. The harmonic controlling network (HCN) applied in the proposed DPA provides the impedance transformation for the harmonic components so that it achieves significant harmonic suppression. For the proposed DPA , the...
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