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Carbon ion implantation and high vacuum electron beam annealing have been applied to produce 200–300nm large SiC nanocrystals on silicon. Simultaneously, Si nanostructures, called silicon nanowhiskers, grow in the unimplanted region of the (100) Si substrate during the annealing treatment. The lateral transition region between the SiC nanocrystals and Si nanostructures has been investigated using...
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