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TiSi 2 was formed by Ti ion implantation into Si(100) and Si (111). Ti ions were extracted from a Metal Vapor Vacuum Arc (MEVVA) ion source at 40kV with high current density. When the ion current density was up to 100μA/cm 2 to a dose of 5 x 10 17 /cm 2 . XRD, RBS and four point probe measurements revealed that C54-TiSi 2 with a low sheet resistivity...
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