The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A detailed study on annealing-induced below band gap absorption in GaSbBi layers, grown by liquid phase epitaxy, is presented. It is shown that, other than the already reported below band gap absorption in GaSb and GaSbBi, due to free carrier absorption and light hole to heavy hole transitions, an additional absorption band near the band edge appears after a rapid thermal anneal of the layers. The...
We investigate a novel Ti Chemical Vapor Deposition (CVD Ti) technique for source/drain and trench contact silicidation. This work is a first demonstration of a highly selective, superconformal Ti process that exhibits a low p-type CVD Ti/SiGe:B contact resistivity (pc) down to 2.1×10−9 Ω.cm2 (a 40% reduction vs. PVD Ti), matching the lowest published values [1-5]. A competitive n-type CVD Ti/Si:P...
We report a record setting low NMOS contact Rc of 2e−9 Ωcm2 with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e−9 Ωcm2 has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity...
Scaling of semiconductor devices over past decades has been made possible by continuous innovations in materials engineering as well as device integration and geometries. Thermal processing has been an enabler for manufacturing advanced devices, both as a unit process and in concert with other key technologies like ion implantation, epitaxy, and film deposition. This paper reviews the evolution of...
Spacecraft orbiting below about 1200 km are exposed to a high flux of atomic oxygen (AO) that can severely degrade surface materials. An Electron Cyclotron Resonance (ECR) based system was used to simulate LEO conditions. The ECR source was characterized by Kapton dosimetry and in-situ four point probe silver film resistively measurements. The VUV output was measured by a calibrated VUV spectrometer...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.