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Magnetic nanostructures with perpendicular magnetic anisotropy (PMA), as compared with the spin valves with in-plane anisotropy, have a lower level of thermal magnetization noise due to the high value of PMA, as well as a lower critical current density required for magnetization reversal nanostructures [1, 2].
With the fast development of information storage, exploiting new concepts for dense, fast, and non-volatile random access memory with reduced energy consumption is a significant and challenging task. To realize this goal, electric-field control of magnetism is crucial. In this regard, multiferroic materials are important and have attracted much attention due to their interesting new physics and potentials...
Anisotropic magnetoresistance (AMR) effect in Pt/YIG system where only Pt contributed to charge transport causes much attentions. Chien regarded that the Pt has been magnetized by the YIG due to magnetic proximity effect (MPE). In contrast, Saitoh proposed a new mechanism entitled as spin Hall magnetoresistance (SMR) to explain the AMR in Pt/YIG. The key of SMR is the spin current generated by SHE...
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