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Current responses due to the strike of ionized particle onto nMOS transistor of 90 nm and 55 nm generation have been analyzed through 3D device simulations. From the current response, duration of charge collection (tcc) is determined, which correlated strongly with the width of erroneous pulse (SET pulse). Causes of the difference between tcc values of 90 nm and 55 nm generation MOSFETs have been...
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