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Dissimilar joining of shape memory alloy to other materials may find interesting applications in the microelectronics and medical devices, allowing for innovative designs and further miniaturization of parts and devices. Femtosecond laser has been investigated to join NiTi to glass aiming at to assess to which extent NiTi particles will deposit on glass when irradiated by a femtosecond laser beam...
Bonding of immiscible systems is difficult due to the sharp interface and high interfacial energy. A nanoscale transition layer with lattice matching to both sides could be a solution. To examine this hypothesis, Mg and Fe were successfully bonded by a precoated nanoscale Fe 2 Al 5 layer, which in crystallographic terms matched well with both lattices. The interplanar mismatches of...
Wire bonding is the most widely used interconnection technology in microelectronics. Aggressive technology scaling has led to device miniaturization resulting in a need for ultra-fine pitch bonding. A deep understanding of the bond formation process will help improve wire bond process reliability and product yield. This paper reports on the study of ball bond (1st bond on the chip) formation process...
Cu wire bonding is one of the hottest trends in electronic packaging due to the cost and the electrical and thermal performance advantages of Cu wire over Au wire. However, there are many challenges to Cu wire bonding, one of which is the increased stress transmitted to the bond pad during ball bonding process. This high stress is not desirable as it leads to pad damage or cratering in the silicon...
Ball bonding processes are optimized on Al pads with a 25.4 ??m diameter Cu wire to obtain maximum average shear strengths of at least 120 MPa. To quantify the direct effect of bond force and ultrasound on the pad stress, ball bonding is performed on test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic signals are measured. By using a lower value of bond...
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