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The novel use of SiCN underneath TEOS oxide as a bonding surface in the wafer bonding of Backside-illuminated (BSI) sensor is proposed and the mechanism of void control by SiCN is clarified. In general, high-temperature processing results in generating voids between the wafer interfaces after bonding due to the release of high-pressure H2O contained in TEOS. In the proposed mechanism, the SiCN exposed...
In order to control the characteristics of porogen-based porous SiOC film (k < 2.5), we investigated its dependence on the wavelengths of ultraviolet (UV) light by using methods of FT-IR, TDS and nano-indentation. As a result, it was found that specific wavelengths of UV light strongly was effective to porous SiOC film production : porogen desorption, mechanical strength improvement, and reduction...
AlGaN/GaN heterojunction transistors (HFETs) with metal-insulator-semiconductor (MlS)-type gate structure is promising for high frequency and high power applications owing to the superior material properties together with the reduced gate leakage current. In this paper, we present a novel AlGaN/GaN MIS-HFET using so-called in-situ SiN as a gate insulator. The in-situ SiN with a crystalline structure...
Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was...
850 nm AlGaAs-based VCSELs with sub-micron hole arrays on the top of the DBR mirror are presented. The VCSEL exhibits lower threshold current down to 0.5 mA with enhanced optical output power by surface plasmon resonance at the Ag/SiO2 interface consisting the sub-micron metal hole arrays.
We have designed a compact solid compressor by stimulated Brillouin scattering used in a fused silica glass. An 13 ns Nd:YAG laser pulse has been temporally compressed to a 1.2 ns pulse at 1064 nm.
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