AIN/GaN metal insulator semiconductor field effect transistors (MISFETs) were designed, simulated and fabricated. DC and S-parameter measurements were also performed. Drift-diffusion simulations using DESSIS compared AIN/GaN MISFETs and A32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AIN/GaN MISFETs in terms of higher saturation current,...
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