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Device characteristics of the nanowire FETs with nonideal gate structures, such as nonuniform gate oxide and elliptic wire, are investigated using 3D numerical simulation. As the nonideal nanowire cases show acceptable device characteristics and still maintain good performance projection, various nanowires FETs are thus flexible for manufacturing. By simply changing the wire diameter from 10 nm to...
Optimal design for nanowire FETs beyond 22 nm technology node is presented using numerical 3D simulation and physical analysis. Our results suggest that design optimization associated with the wire diameter could achieve performance benefits in the nanowire FET technologies. Small wire diameter is not necessary for performance, though it favors device scaling.
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