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The role of amorphous silicon nanoparticles (a-Si NPs) in electroluminescent characteristics of oxidized amorphous silicon nitride (a-SiN x :O) light-emitting devices (LEDs) has been studied. A-Si NPs with a high density of 1×10 12 cm −2 are formed in the a-SiN x :O films after rapid thermal annealing at 900°C for 40s. A notably enhanced electroluminescence (EL) is...
We employed plasma enhanced chemical vapor deposition technique to fabricate poly-Si films grown at a low temperature of 250 °C by using SiCl 4 with various H 2 dilutions as source gases. It is found that a high deposition rate over 0.25 nm/s can be achieved by using SiCl 4 with low hydrogen dilutions. The Raman spectra measurements and scanning electronic microscopy observations...
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