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Machine Vision
In article number 2306241, Xinghua Wang, Zhongming Wei, Juehan Yang, and co‐workers present photodetectors based on AsSbO3 nanosheets that are able to realize highly selective and high‐performance detection in the solar‐blind ultraviolet band, benefiting from the ultra‐wide bandgap. Owing to the remarkable anisotropic crystal structure, AsSbO3 also shows significant linear dichroism...
Facing the future development trend of miniaturization and intelligence of electronic devices, solar‐blind photodetectors based on ultrawide‐bandgap 2D semiconductors have the advantages of low dark current, and high signal‐to‐noise ratio, as well as the features of micro‐nanometer miniaturization and multi‐functionalization of 2D material devices, which have potential applications in the photoelectric...