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Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the “metal-induced nanocrystalline mechanism”, i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix and...
The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with...
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