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In this paper, a successful assembly of the two guest dies on the large size (38.7 mm × 26.7 mm) through silicon interposer (TSI) and 45mm × 45mm size organic substrate was achieved. The warpage at different steps of the proposed assembly flow: Chip-on-Chip (CoC) first, then CoC on Substrate (CoC-oS) was measured by the shadow moiré method. The warpage simulation model was also developed and validated...
Reliability of the embedded ultrathin device in the organic substrate packaging is one of the major concerns during its applications. In this paper, drop impact tests were conducted to the embedded ultrathin stress sensor chip in the organic substrate. Stresses were monitored with the embedded stress sensor chip based on silicon piezoresistive effects. Dynamic explicit finite element model with the...
Analytical solution is established to calculate equivalent thermal resistances of the through silicon via (TSV) structure in both z direction and x y directions and is verified by the finite element simulation. The effects of the structural parameters such as the thickness of die, the diameter of copper via and the pitch of the copper via on the equivalent thermal conductivity of composite TSV structure...
Thermo-mechanical reliability for 3D stacked-die package with through silicon via (TSV) is studied through finite element simulation with sub-modeling technology, and design of experiments (DoE) using Taguchi experiments and analysis method. Firstly, the thermo-mechanical responses of micro-solder joints between stacked-die and copper via/SiO2 insulated layer structures are investigated under accelerated...
Multi-physics multi-scale modeling issues in various stages of the LED manufacturing, 3D-SiP, and nano interconnects have been discussed. Molecular dynamics (MD) and finite element method (FEM) have been used to study the scale effect of the material properties and the prediction of the module behaviors which are critical to LED fabrication. We propose a new concept to integrate multi-physics/multi-scale...
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