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In this paper, a successful assembly of the two guest dies on the large size (38.7 mm × 26.7 mm) through silicon interposer (TSI) and 45mm × 45mm size organic substrate was achieved. The warpage at different steps of the proposed assembly flow: Chip-on-Chip (CoC) first, then CoC on Substrate (CoC-oS) was measured by the shadow moiré method. The warpage simulation model was also developed and validated...
Transient responses of 3D stacked-die package with through silicon via (TSV) structure under board level drop test load following the JEDEC standard are investigated using the Input-G finite element simulation method. In order to reduce the finite element mesh size the stacked-die package under investigation is modeled with details while the others are simplified as blocks with equivalent material...
Analytical solution is established to calculate equivalent thermal resistances of the through silicon via (TSV) structure in both z direction and x y directions and is verified by the finite element simulation. The effects of the structural parameters such as the thickness of die, the diameter of copper via and the pitch of the copper via on the equivalent thermal conductivity of composite TSV structure...
Thermo-mechanical reliability for 3D stacked-die package with through silicon via (TSV) is studied through finite element simulation with sub-modeling technology, and design of experiments (DoE) using Taguchi experiments and analysis method. Firstly, the thermo-mechanical responses of micro-solder joints between stacked-die and copper via/SiO2 insulated layer structures are investigated under accelerated...
A finite element model which includes electromigration, thermomigration, stress migration and concentration diffusion is established to study the mass diffusion phenomenon. Numerical experiment is carried out to obtain the electrical, thermal, stress and atomic concentration fields of the sweat and through silicon via (TSV) structure under high current density load. The effectiveness of the electromigration...
A finite element model which includes fluid flow, transport by diffusion, migration and convection, multiple species, and reactions is established to simulate the copper electrochemical deposition process in through silicon via (TSV) trench. The effects of fluid flow of the bulk copper electrolyte on the micro TSV trench have been investigated. The copper plating process in different TSV trench geometries...
In this paper, the wire bonding process of high power light emitting diodes (LED), which was simplified to consist of impact and vibration stages, was investigated by using a nonlinear finite element method. Parametric studies were carried out to examine the effects of the ultrasonic vibration amplitude, the friction coefficient between the free air ball (FAB) and bond pad, the incline of LED chip...
Undesired thermal residual stresses and strains always exist in GaN epitaxial film after the process of metal organic chemical vapor deposition (MOCVD) due to difference in thermal expansion coefficients between the silicon substrate and epitaxial layer. These stresses would mostly result in defects such as dislocations, surface roughness, and even cracks in epitaxial layer preventing further device...
Due to large mismatch in coefficients of thermal expansion between the copper via and the silicon of Through Silicon Via(TSV), significant thermal stresses will be induced at the interfaces of copper/dielectric layer (usually SiO2) and dielectric layer/silicon when TSV structure is subjected to subsequent temperature loadings, which would influence the reliability and the electrical performance of...
Multi-physics multi-scale modeling issues in various stages of the LED manufacturing, 3D-SiP, and nano interconnects have been discussed. Molecular dynamics (MD) and finite element method (FEM) have been used to study the scale effect of the material properties and the prediction of the module behaviors which are critical to LED fabrication. We propose a new concept to integrate multi-physics/multi-scale...
A multi-physics multi-scale modeling platform has been developed and it has been applied to various stages of the LED manufacturing such as MOCVD reactor design, epitaxial growth based on silicon wafer, chip design and manufacturing, module packaging and assembly, and specific lamps. Discussions are also given to the ultra-scalable reactor design, material constitutive modeling, and curvature evolution...
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