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The diffusion behavior of hydrogen contained in the surface layer of oxynitrides serving as models for poly-Si/oxynitride interfaces in MOS transistors was studied with H depth profiling by nuclear reaction analysis. The poly-Si/oxynitride interface is found to contain mobile and stable H species. The mobile H species tends to desorb in vacuum at room temperature. A TDDB improvement caused by resting...
We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N2O gas, respectively. The N2O-oxynitride shows a stronger resistance against the approach of the SiO2/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates...
We conducted a first-principles examination to determine the most stable position of an icosahedral B12 cluster near a Si (001) surface. We discovered that such a cluster is most stable when its center is located at the fourth layer position from the Si top surface where a Si dimer sits directly overhead. Scanning tunneling microscopy (STM) simulation revealed that Si dimers above the B12 cluster...
Interface characteristics with respect to nitrogen-distribution and hydrogen-diffusion behavior were evaluated for two model tunnel oxides nitrided by NO and N2O gas, respectively. Nuclear reaction analysis reveals a different resistance of the two interfaces against the approach by H, which allows us to correlate the characteristic N-distribution of the tunnel oxide with a H-diffusion barrier. From...
The process integration schemes for CMOS FinFET fabricated on bulk Si substrate are discussed from the viewpoints of device size scalability and short channel effect control. The trimming technique by special oxidation was applied to reduce fin width down to sub-10 nm regime. A novel punch through stopper (PTS) formation process was introduced to the bottom of the channel region to scale the gate...
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