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We observed photoluminescence quenching in crystalline (c) Si/amorphous (a) SiOx core-shell silicon nanowires (Si-NWs). We observed that the photoluminescence (PL) intensity strongly depends on the stoichiometry of outer a-SiOx matrix, which was characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The PL showed a broad-range emission from 1.6 to 2.4 eV...
We fabricated silicon nanostructures (Si-NSs) on SiOx/Si substrate in chemical vapor deposition. During the synthesis of Si-NSs, Si sunflower-shaped structures of one to hundred microns were observed, therein the nanoparticles (NPs), nanowires, and nanorods were aligned in an ordered manner. We suggest that the NSs reported here are evolved by the electrostatic force exerted by charged NPs in gas...