Search results for: Qifeng Lu

Items from 1 to 20 out of 29 results

article

Bioinspired Flexible Volatile Organic Compounds Sensor Based on Dynamic Surface Wrinkling with Dual‐Signal Response

Chunyan Qu, Shuqi Wang, Lin Liu, Yuanyuan Bai, more

Small > 15 > 17 > n/a - n/a

Living systems can respond to external stimuli by dynamic interface changes. Moreover, natural wrinkle structures allow the surface to switch dynamically and reversibly from flat to rough in response to specific stimuli. Artificial wrinkle structures have been developed for applications such as optical devices, mechanical sensors, and microfluidic devices. However, chemical molecule‐triggered flexible...

article

Flexible Sensors: Bioinspired Flexible Volatile Organic Compounds Sensor Based on Dynamic Surface Wrinkling with Dual‐Signal Response (Small 17/2019)

Chunyan Qu, Shuqi Wang, Lin Liu, Yuanyuan Bai, more

Small > 15 > 17 > n/a - n/a

In article number 1900216, Ting Zhang and co‐workers propose a dual‐signal responsive flexible volatile organic compound sensor based on surface wrinkles with both dynamic visual feedback and a quantitative electrical signal. Tunable sensitivity and selectivity are well‐controlled, and the high selectivity toward ethanol vapor is explained by a proximity mechanism. This platform can provide a novel...

article

Total Dose Effects and Bias Instabilities of (NH₄)₂S Passivated Ge MOS Capacitors With Hf_xZr_1–xO_y Thin Films

Yifei Mu, Yuxiao Fang, Ce Zhou Zhao, Chun Zhao, more

IEEE Transactions on Nuclear Science > 2017 > 64 > 12 > 2913 - 2921

The effects of biased irradiation on Ge MOS capacitors with Hf_xZr_1–xO_y (0.43 < x < 1) gate dielectrics have been investigated. These devices were irradiated by a 662-KeV Cs

$^{137} \gamma $

-ray radiation source with 0.5 or –0.5 V gate bias. Prior to irradiation exposure, leakage behavior and bias-instability of Hf_xZr_1–xO_y films were also examined. Gate leakage current density increases with...

article

Incidence of active tuberculosis in individuals with latent tuberculosis infection in rural China: follow-up results of a population-based, multicentre, prospective cohort study

Lei Gao, Xiangwei Li, Jianmin Liu, Xinhua Wang, more

The Lancet Infectious Diseases > 2017 > 17 > 10 > 1053-1061

The management of latent Mycobacterium tuberculosis infection is a new priority action for the WHO End Tuberculosis (TB) Strategy. However, national guidelines on latent tuberculosis infection testing and treatment have not yet been developed in China. Here, we present the results from the 2-year follow-up of a study that aimed to track the development of active disease in individuals with latent...

article

Investigation of Anomalous Hysteresis in MOS Devices With ZrO₂ Gate Dielectrics

Qifeng Lu, Yanfei Qi, Ce Zhou Zhao, Chenguang Liu, more

IEEE Transactions on Device and Materials Reliability > 2017 > 17 > 3 > 526 - 530

Abnormal capacitance-voltage (CV) behavior is observed in metal-oxide semiconductor devices with zirconium oxide-gate dielectrics using a pulse CV technique. The relative positions of forward and reverse CV traces measured by the pulse technique are opposite those by conventional CV measurement. This unusual phenomenon is inconsistent with charge trapping and de-trapping, but may be mainly attributable...

chapter

Compliance current effect on switching behavior of hafnium oxide based RRAM

Yanfei Qi, Chun Zhao, Yuxiao Fang, Qifeng Lu, more

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) > 1 - 4

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

In this study, we compared the basic switching behaviors of HfO₂, Al₂O₃ and HfAlO_x (Hf:Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO₂ based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al₂O₃ based RRAM (85→54). HfAlO_x (Hf:Al=9:1)) based one has the best resistance ratio (300–440)...

chapter

Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode

Yanfei Qi, Yuxiao Fang, Chun Zhao, Qifeng Lu, more

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) > 1 - 3

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of...

chapter

Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs

Qifeng Lu, Sang Lam, Yifei Mu, Ce Zhou Zhao, more

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) > 491 - 494

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

HfO₂ gate dielectric is fabricated by atomic layer deposition on an n-type germanium (Ge) substrate to form p-type Ge MOS capacitors. Three solution-based chemical treatments of the Ge surface using propanethiol, octanethiol and (NH₄)₂S solutions respectively as well as post-metallization annealing are investigated to improve the interface quality of HfO2 gate dielectric on the Ge substrate. Experimental...

article

Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices

Qifeng Lu, Yanfei Qi, Ce Zhou Zhao, Chun Zhao, more

Vacuum > 2017 > 140 > C > 19-23

Capacitance-voltage (CV) characteristics were investigated for MOS devices with ZrO₂ and HfO₂ high-k dielectrics using pulse technique and LCR meter. Opposite relative positions of the forward and reverse traces were observed for the CV curves extracted from the two techniques. This unusual phenomenon was believed to be caused by the interface dipoles formed at high-k/SiO_x interface, since it was...

article

Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

Yifei Mu, Ce Zhou Zhao, Qifeng Lu, Chun Zhao, more

IEEE Transactions on Nuclear Science > 2017 > 64 > 1-2 > 673 - 682

This paper reports on the low-dose-rate radiation response of Al-HfO₂/SiO₂–Si MOS devices, where the gate dielectric was formed by atomic layer deposition with 4.7 nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response techniques under continuous gamma (

$\gamma $

) ray exposure at a relatively low-dose-rate...

article

Hemiarthroplasty versus internal fixation in super-aged patients with undisplaced femoral neck fractures: a 5-year follow-up of randomized controlled trial

Qifeng Lu, Genling Tang, Xijiang Zhao, Shuguang Guo, more

Archives of Orthopaedic and Trauma Surgery > 2017 > 137 > 1 > 27-35

Introduction There were higher rates of revision, complication, non-union, delayed union, and poorer functional outcomes reported in super-aged patients of undisplaced femoral neck fractures treated with internal fixation. Therefore, we designed this randomized comparative study aiming to compare the effectiveness and long-term follow-up results of hemiarthroplasty (HA) with that of multiple cannulated...

chapter

Anomalous capacitance-voltage hysteresis in MOS devices with ZrO2 and HfO2 dielectrics

Qifeng Lu, Yanfei Qi, Ce Zhou Zhao, Chun Zhao, more

2016 5th International Symposium on Next-Generation Electronics (ISNE) > 1 - 2

2016 5th International Symposium on Next-Generation Electronics (ISNE)

Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide...

chapter

Detecting Acromegaly: Screening for Disease with a Morphable Model

Erik Learned-Miller, Qifeng Lu, Angela Paisley, Peter Trainer, more

Lecture Notes in Computer Science > Medical Image Computing and Computer-Assisted Intervention – MICCAI 2006 > Clinical Applications II > 495-503

Acromegaly is a rare disorder which affects about 50 of every million people. The disease typically causes swelling of the hands, feet, and face, and eventually permanent changes to areas such as the jaw, brow ridge, and cheek bones. The disease is often missed by physicians and progresses beyond where it might if it were identified and treated earlier. We consider a semi-automated approach to detecting...

article

Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

Yifei Mu, Ce Zhou Zhao, Yanfei Qi, Sang Lam, more

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions... > 2016 > 372 > C > 14-28

The construction of a turnkey real-time and on-site radiation response testing system for semiconductor devices is reported. Components of an on-site radiation response probe station, which contains a 1.11GBq Cs¹³⁷ gamma (γ)-ray source, and equipment of a real-time measurement system are described in detail for the construction of the whole system. The real-time measurement system includes a conventional...

article

Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

Way Foong Lim, Hock Jin Quah, Qifeng Lu, Yifei Mu, more

Applied Surface Science > 2016 > 365 > C > 296-305

Effects of rapid thermal annealing at different temperatures (700–900°C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO₂) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron...

chapter

Radiometric biases in AMSU-A resulting from local oscillator drifts and shifts: Improved radiative transfer modelling and impacts in the met office NWP system

Katie Lean, William Bell, Qifeng Lu

2014 13th Specialist Meeting on Microwave Radiometry and Remote Sensing of the Environment (MicroRad) > 171 - 175

2014 Specialist Meeting on Microwave Radiometry and Remote Sensing of the Environment (MicroRad)

Improvements in the radiative transfer modelling for the lower tropospheric channels of AMSU-A (channels 6–8) have been achieved through developing more accurate estimates of the central frequencies for the channel passbands. Shifts and drifts in the center frequencies caused by instability in the local oscillator have been diagnosed for NOAA-15, -18, -19 and Metop A. The effect of correcting for...

article

Improved assimilation of data from China's FY‐3A microwave temperature sounder

Qifeng Lu, W. Bell, N. Bormann, P. Bauer, more

Atmospheric Science Letters > 13 > 1 > 9 - 15

The FY‐3A microwave temperature sounder (MWTS) suffers from nonlinearities in the calibration of the radiometer and uncertainties in the radiometer passbands. Corrections have been developed and are assessed here by comparing recalibrated MWTS data with equivalent advanced microwave sounding unit‐A (AMSU‐A) observations. The corrections are effective in improving the first guess departure statistics...

article

A study on height reassignment for the AMV products of the FY-2C satellite

Chengyin Yang, Qifeng Lu, Peng Zhang

Journal of Meteorological Research > 2012 > 26 > 5 > 614-628

A method for using height reassignment to improve the quality of satellite-derived atmospheric motion vectors (AMVs) is presented. The rationale underlying height reassignment is explored, and the technical details are studied by applying three height reassignment schemes that use NCEP reanalysis winds. The quality of the AMVs is generally improved following reassignment, although the magnitude of...

article

An evaluation of FY‐3A satellite data for numerical weather prediction

Qifeng Lu, W. Bell, P. Bauer, N. Bormann, more

Quarterly Journal of the Royal Meteorological Society > 137 > 658 > 1298 - 1311

FY‐3A, launched in May 2008, is the first in a series of seven polar‐orbiting meteorological satellites due to be launched by China's Meteorological Administration in the period leading up to 2020. The FY‐3A payload includes four instruments of particular interest for numerical weather prediction (NWP): microwave temperature and humidity sounders, a microwave imager, and an infrared sounder. The main...

article

Initial evaluation and assimilation of FY-3A atmospheric sounding data in the ECMWF System

QiFeng Lu

Science China Earth Sciences > 2011 > 54 > 10 > 1453-1457

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CAPACITANCE-VOLTAGE CHARACTERISTICS (5)
HAFNIUM COMPOUNDS (5)
ATMOSPHERIC MODELING (3)
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SWITCHES (2)
TRANSPORTATION (2)
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INFONA - science communication portal

Search results for: Qifeng Lu

Bioinspired Flexible Volatile Organic Compounds Sensor Based on Dynamic Surface Wrinkling with Dual‐Signal Response

Flexible Sensors: Bioinspired Flexible Volatile Organic Compounds Sensor Based on Dynamic Surface Wrinkling with Dual‐Signal Response (Small 17/2019)

Total Dose Effects and Bias Instabilities of (NH₄)₂S Passivated Ge MOS Capacitors With Hf_xZr_1–xO_y Thin Films

Incidence of active tuberculosis in individuals with latent tuberculosis infection in rural China: follow-up results of a population-based, multicentre, prospective cohort study

Investigation of Anomalous Hysteresis in MOS Devices With ZrO₂ Gate Dielectrics

Compliance current effect on switching behavior of hafnium oxide based RRAM

Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode

Atomic layer deposition of HfO₂ gate dielectric with surface treatments and post-metallization annealing for germanium MOSFETs

Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices

Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

Hemiarthroplasty versus internal fixation in super-aged patients with undisplaced femoral neck fractures: a 5-year follow-up of randomized controlled trial

Anomalous capacitance-voltage hysteresis in MOS devices with ZrO2 and HfO2 dielectrics

Detecting Acromegaly: Screening for Disease with a Morphable Model

Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

Radiometric biases in AMSU-A resulting from local oscillator drifts and shifts: Improved radiative transfer modelling and impacts in the met office NWP system

Improved assimilation of data from China's FY‐3A microwave temperature sounder

A study on height reassignment for the AMV products of the FY-2C satellite

An evaluation of FY‐3A satellite data for numerical weather prediction

Initial evaluation and assimilation of FY-3A atmospheric sounding data in the ECMWF System

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