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A new 4H-SiC trench-gate MOSFET structure with epitaxial buried channel for accumulation-mode operation, has been designed and fabricated, aiming at improving channel electron mobility. Coupled with improved fabrication processes, the MOSFET structure eliminates the need of high dose N + source implantation. High dose N + implantation requires high-temperature (⩾1550°C) activation...
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