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Owing to the large bandgap, breakdown electric field (Eb) and high carrier mobility, wide-bandgap semiconductor (e.g. SiC and GaN) based power devices have been extensively studied for next-generation power-switching applications [1-2]. Recently, a new wide-bandgap oxide semiconductor, gallium oxide (β-Ga2O3), has attracted attention for power-switching applications because it has an extremely large...
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance $R_{{\rm ON, SP}}$ (5.12 $\text{m}\Omega \cdot \textrm {cm}^{2}$ ), a low turn-ON voltage (<0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-$\mu \text{m}$ anode/cathode distance,...
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