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For utilization in environments where radiation causes concern, a material's photogeneration coefficient proves essential for device designers. To extract this parameter for gallium oxide, which exhibits higher breakdown voltage characteristics compared with other commonly used semiconductor materials, making it desirable for high‐power applications, Schottky diodes receive high‐dose‐rate radiation...
The recent demonstration of W mm−1 output power at 94 GHz in AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) has established AlN as a promising platform for millimeter‐wave electronics. The current state‐of‐art AlN HEMTs using ex situ‐deposited silicon nitride (SiN) passivation layers suffer from soft gain compression due to trapping of carriers by surface states. Reducing surface...