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Heteroepitaxial growth of conductive Si-doped β-Ga2O3 films on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) was successfully performed. The effect of Si content on the structural, morphological, electrical and optical properties of Si-doped β-Ga2O3 films was investigated in detail. Distinctive surface morphology evolution of films depending on Si content was observed...
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