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Bacterial infections leading to sepsis are a major cause of deaths in the intensive care unit. Unfortunately, no effective methods are available to capture the early onset of infectious sepsis near the patient with both speed and sensitivity required for timely clinical treatment. To fill the gap, the authors develop a highly miniaturized (2.5 × 2.5 µm2) plasmo‐photoelectronic nanostructure device...
In article number 1905611, Yongqing Li, Xiaogan Liang, Katsuo Kurabayashi, and co‐workers describe a highly miniaturized plasmo‐photoelectronic device incorporating high‐affinity antibody‐conjugated structurally engineered hemispherical gold nanoparticles and a molybdenum disulfide photoconductive channel to detect a blood biomarker released by neutrophils at the early onset of bacterial infections...
To realize hardware-based artificial intelligence (AI) systems for practical applications, it is necessary to create new memory devices with multiple (or analog-tunable) long-lasting memory states.[1] In our work, we identify that the interlayer deformation in layered semiconductors can form multiple long-lasting, metastable charge-trapping states, which can be exploited to fabricate memory transistors...
Detrimental nanoscale gas bubble defects seriously hinder the practical applications of nanoimprint lithography in manufacturing of nanoelectronic devices. Here, we present a nanofluidics study on the formation and evolution mechanisms of nanoscale bubble defects in dispensing-based UV-curable nanoimprint lithography processes. Our work indicates that the formation of nanoscale bubble defects is mainly...
MoS2 and other emerging two-dimensional layered transition metal dichalcogenides hold the promise for making novel nanoelectronic, optoelectronic, and biosensing devices with new or significantly improved functionalities. To realize this potential and especially enable scale-up device applications of such atomically layered materials, new nanomanufacturing and material processing methods are needed...
We present a growth process mediated by nanoimprinted nanostructures specifically for producing bismuth selenide (Bi2Se3) topological insulator nanoribbons with a high yield. In this process, topological insulator nanostructures are grown on nanoimprinted gratings by using a nanoparticle-catalyzed vapor–liquid–solid mechanism. In comparison with the growth processes performed on flat and randomly...
We investigated the effects of concomitant In- and N-incorporation on the photoluminescence (PL) of GaInNAs grown by molecular beam epitaxy. In comparison with the N-free GaInAs epilayer, the PL spectra of the GaInNAs epilayer exhibit an anomalous S-shape temperature dependence of dominant luminescence peak. Through further careful inspection, two PL peaks are clearly discerned and are associated...
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